parameter l value unit collector-base voltage v cbo 400 v collector-emitter voltage v ceo 200 v emitter-base voltage v ebo 6 v collector current i c 8.0 a base current i b 2.0 a total dissipation at p tot 60 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c BU806 parameter symbol test conditions min. typ. max. unit collector cut-off current i ces v ce =400v, v beo =0 100 ua emitter cut-off current i ebo v eb =6v, i c =0 3.5 ma collector-emitter sustaining voltage v ceo i c =100ma, i b =0 200 v dc current gain h fe(1) v ce =5v, i c =5.0a 200 collector-emitter saturation voltage v ce(sat) i c =5.0a,i b =50ma 1.5 v base-emitter saturation voltage v be(sat) i c =5.0a,i b =50ma 2.4 v damper diode forward voltage v f i f =4.0a 2 v storage time t s i c =5a, i b =0.5a 0.55 us medium voltage & fast switching darlingtontransistor product specification the devices are silicon epitaxial planar npn power transistors in darlington configuration with integrated base-emitter speed-up diode, mounted in to-220 plastic package. they can be used in horizontal output stages of 110 o crt video displays. electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) description to-220 tiger electronic co.,ltd
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